Datasheet > EFA120D-SOT89

EFA120D-SOT89

更新时间： 2024-01-20 05:02:10

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	33K
描述
Low Distortion GaAs Power FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

EFA120D-SOT89 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EFA120D-SOT89 数据手册

Excelics

EFA120D-SOT89

PRELIMINARY DATA SHEET

Low Distortion GaAs Power FET

Features

DC-4GHz

177-183

65-75

65-69

LOW COST SURFACE-MOUNT PLASTIC PACKAGE

+28.0dBm TYPICAL OUTPUT POWER

14.0dB TYPICAL POWER GAIN AT 2GHz

0.7dB TYPICAL NOISE FIGURE AT 2GHz

+42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT

AT 2GHz

SOURCE

0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

29-31

16-20

14-16

(Top View)

All Dimensions In Mils

Applications

Analog and Digital Wireless System

HPA

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

dBm

Output Power at 1dB Compression

f = 2GHz

26.5

28.0

P_1dB

Vds=7V, Ids=180mA

Gain at 1dB Compression

Vds=7V, Ids=180mA

12.0

14.0

G_1dB

Power Added Efficiency at 1dB Compression

PAE

Vds=7V, Ids=180mA

f = 2GHz

Noise Figure

f = 2GHz

Vds=5V, Ids=75mA

Vds=5-7V, Ids=180mA

Output 3rd Order Intercept Point

Vds=5-7V, Ids=180mA

Vds=5V, Ids=75mA

0.7

1.2

f = 2GHz

dBm

IP3

Saturated Drain Current Vds=3V, Vgs=0V

220

140

340

180

-2.0

-15

440

-3.5

Idss

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

Vds=3V, Ids=3mA

Drain Breakdown Voltage Igd=1.2mA

Source Breakdown Voltage Igs=1.2mA

Thermal Resistance

-11

-7

BVgd

BVgs

Rth

-14

43*

^oC/W

*Overall Rth depends on case mounting.

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Drain Current

ABSOLUTE¹

12V

CONTINUOUS²

Vds

-8V

-4V

Vgs

Idss

390mA

Ids

Forward Gate Current

Input Power

30mA

26dBm

175^oC

-65/175^oC

3.2 W

5mA

Igsf

@ 3dB Compression

150^oC

-65/150^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

Tstg

2.7 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

中文翻译

下载PDF

与EFA120D-SOT89相关器件

型号	品牌	获取价格	描述	数据表
EFA160A	EXCELICS	获取价格	Low Distortion GaAs Power FET
EF-A2.5D1A1.200	CTS	获取价格	Oscillator,
EF-A2.5D1C1.200	CTS	获取价格	Oscillator,
EF-A2.5D2A1.200	CTS	获取价格	Oscillator,
EFA240B	EXCELICS	获取价格	Low Distortion GaAs Power FET
EFA240BV	EXCELICS	获取价格	Low Distortion GaAs Power FET
EFA240BV-100P	EXCELICS	获取价格	Low Distortion GaAs Power FET
EFA240D	EXCELICS	获取价格	Low Distortion GaAs Power FET
EFA240D-CP083	EXCELICS	获取价格	Low Distortion GaAs Power FET
EFA240D-SOT89	ETC	获取价格	DC-4GHz Low Distortion GaAs Power FET