Datasheet > EFA120D

EFA120D

更新时间： 2024-11-24 10:05:43

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	46K
描述
Low Distortion GaAs Power FET

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EFA120D 数据手册

EFA120D

UPDATED 09/05/2006

Low Distortion GaAs Power FET

FEATURES

•

+28.0dBm TYPICAL OUTPUT POWER

19.5dB TYPICAL POWER GAIN AT 2GHz

0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION AND PLATED HEAT SINK

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

Idss SORTED IN 30mA PER BIN RANGE

Chip Thickness: 75 ± 20 microns

All Dimensions In Microns

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f= 2GHz

f= 4GHz

f= 2GHz

f= 4GHz

26.0

28.0

19.5

14.5

P_1dB

dBm

Vds=8V, Ids=50% Idss

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

18.0

G_1dB

PAE

f=2GHz

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

Vds=3V,Ids=3.4mA

Igd=1.2mA

220

140

340

440

-3.5

Transconductance

180

-2.0

-15

-14

Pinch-off Voltage

BVgd

BVgs

Rth

Drain Breakdown Voltage

Source Breakdown Voltage

-13

-7

Igs=1.2mA

Thermal Resistance (Au-Sn Eutectic Attach)

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

Vds

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reserve Gate Current

Input Power

ABSOLUTE¹

12V

CONTINUOUS²

Vgs

-5V

-4V

Igsf

5.4 mA

0.9 mA

25 dBm

175^oC

1.8 mA

0.3 mA

Igsr

@ 3dB Compression

175^oC

Tch

Channel Temperature

Storage Temperature

Total Power Dissipation

Tstg

-65/175^oC

3.3 W

Note:

1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised September 2006

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