Datasheet > EFA060B

EFA060B

更新时间： 2024-11-24 06:56:11

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	33K
描述
Low Distortion GaAs Power FET

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中文翻译

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技术参数
数据手册

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EFA060B 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82
Base Number Matches：	1

EFA060B 数据手册

EFA060B/EFA060BV

Excelics

DATA SHEET

Low Distortion GaAs Power FET

350

+25.0dBm TYPICAL OUTPUT POWER

10.5dB TYPICAL POWER GAIN FOR EFA060B AND

12.0dB FOR EFA060BV AT 12GHz

•

0.3 X 600 MICRON RECESSED “MUSHROOM” GATE

Si₃N₄PASSIVATION

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

350

100

EFA060BV WITH VIA HOLE SOURCE GROUNDING

Idss SORTED IN 10mA PER BIN RANGE

•

Chip Thickness: 75 ± 20 microns

All Dimensions In Microns

Via Hole

ELECTRICAL CHARACTERISTICS (T_a= 25 ^OC)

No Via Hole For EFA060B

SYMBOLS

PARAMETERS/TEST CONDITIONS

EFA060B

TYP

UNIT

EFA060BV

MIN

MAX

MIN

TYP

MAX

Output Power at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

23.0

25.0

23.0

25.0

P_1dB

G_1dB

PAE

Idss

dBm

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

f=18GHz

9.0

10.5

8.0

10.5

12.0

10.0

Gain at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

Saturated Drain Current Vds=3V, Vgs=0V

100

170

240

-3.5

100

170

240

-3.5

Transconductance

Pinch-off Voltage

Vds=3V, Vgs=0V

-2.0

-15

-14

-2.0

-15

-14

Vds=3V, Ids=1.5mA

BVgd

BVgs

Rth

Drain Breakdown Voltage Igd=1.0mA

Source Breakdown Voltage Igs=1.0mA

Thermal Resistance (Au-Sn Eutectic Attach)

-12

-7

-12

-7

^oC/W

MAXIMUM RATINGS AT 25^OC

SYMBOLS

PARAMETERS

EFA060B

EFA060BV

ABSOLUTE¹

CONTINUOUS²

ABSOLUTE¹

CONTINUOUS²

Vds

Vgs

Ids

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12V

-8V

-4V

-8V

-4V

Idss

190mA

2.5mA

Idss

Igsf

Forward Gate Current

Input Power

15mA

23dBm

15mA

23dBm

2.5mA

@ 3dB

Compression

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

175^oC

150^oC

175^oC

150^oC

-65/175^oC

-65/150^oC

-65/175^oC

-65/150^oC

1.8W

1.5W

2.5W

2.1W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

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