Datasheet > CSD17311Q5_1

CSD17311Q5_1

更新时间： 2024-11-13 09:33:51

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
10页	373K
描述
30V N-Channel NexFET? Power MOSFET

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CSD17311Q5_1 数据手册

CSD17311Q5

www.ti.com

SLPS257 –MARCH 2010

30V N-Channel NexFET™ Power MOSFET

Check for Samples: CSD17311Q5

PRODUCT SUMMARY

Drain to Source Voltage

FEATURES

V_DS

Q_g

•

Optimized for 5V Gate Drive

Ultra Low Q_gand Q_gd

Low Thermal Resistance

Avalanche Rated

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

mΩ

Q_gd

5.2

V_GS= 3V

2.3

1.8

1.6

R_DS(on)Drain to Source On Resistance

V_GS= 4.5V

V_GS= 8V

1.2

Pb Free Terminal Plating

RoHS Compliant

V_GS(th)

Threshold Voltage

Halogen Free

SON 5-mm × 6-mm Plastic Package

ORDERING INFORMATION

Device

CSD17311Q5

Package

Media

Qty

Ship

APPLICATIONS

SON 5-mm × 6-mm

Plastic Package

13-Inch

Reel

Tape and

Reel

2500

•

Notebook Point-of-Load

•

Point-of-Load Synchronous Buck in

Networking, Telecom and Computing Systems

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C unless otherwise stated

VALUE

UNIT

DESCRIPTION

V_DS

V_GS

Drain to Source Voltage

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications,

and optimized for 5V gate drive applications.

Gate to Source Voltage

+10 / –8

100

Continuous Drain Current, T_C= 25°C

Continuous Drain Current⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

I_D

Top View

I_DM

P_D

T_J,

200

3.2

Operating Junction and Storage

–55 to 150

638

°C

T_STGTemperature Range

Avalanche Energy, Single Pulse

I_D= 113A, L = 0.1mH, R_G= 25Ω

E_AS

(1) Typical R_qJA

= 40°C/W when mounted on a

1-inch²

(6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch

(1.52-mm) thick FR4 PCB.

(2) Pulse duration ≤300ms, duty cycle ≤2% TextAddedForSpacing

P0094-01

Text_added_for_spacing_Text_added_for_spacing

R_DS(on)vs V_GS

GATE CHARGE

I_D= 30A

V_DS= 15V

T_C= 125°C

T_C= 25°C

V_GS- Gate-to-Source Voltage - V

Q_g- Gate Charge - nC

G006

G003

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...10

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与CSD17311Q5_1相关器件

型号	品牌	获取价格	描述	数据表
CSD17312Q5	TI	获取价格	30V N-Channel NexFET™ Power MOSFET
CSD17312Q5_11	TI	获取价格	30V N-Channel NexFETâ¢ Power MOSFET
CSD17313Q2	TI	获取价格	30V N-Channel NexFET™ Power MOSFET
CSD17313Q2_1010	TI	获取价格	30V N-Channel NexFET? Power MOSFET
CSD17313Q2Q1	TI	获取价格	30V N-Channel NexFET Power MOSFET
CSD17313Q2T	TI	获取价格	采用 2mm x 2mm SON 封装的单路、32mΩ、30V、N 沟道 NexFET™
CSD17318Q2	TI	获取价格	采用 2mm x 2mm SON 封装的单路、16.9mΩ、30V、N 沟道 NexFET
CSD17318Q2T	TI	获取价格	采用 2mm x 2mm SON 封装的单路、16.9mΩ、30V、N 沟道 NexFET
CSD17322Q5A	TI	获取价格	30V, N-Channel NexFETâ¢ Power MOSFETs
CSD17327Q5A	TI	获取价格	30V, N-Channel NexFETâ¢ Power MOSFETs

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