Datasheet > CSD17507Q5AT

CSD17507Q5AT

更新时间： 2024-09-26 02:58:39

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
9页	337K
描述
CSD17507Q5A 30-V N-Channel NexFETâ¢ Power MOSFET

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CSD17507Q5AT 数据手册

CSD17507Q5A

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SLPS243A –JULY 2010–REVISED AUGUST 2010

30V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD17507Q5A

PRODUCT SUMMARY

FEATURES

V_DS

Q_g

Drain to Source Voltage

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

2.8

0.7

•

Ultralow Q_gand Q_gd

Low Thermal Resistance

Avalanche Rated

mΩ

Q_gd

V_GS= 4.5V

V_GS= 10V

1.6

11.8

R_DS(on)Drain to Source On Resistance

V_GS(th)Threshold Voltage

Pb Free Terminal Plating

RoHS Compliant

Halogen Free

Text Added For Spacing

ORDERING INFORMATION

SON 5-mm × 6-mm Plastic Package

Device

CSD17507Q5A

Package

Media

Qty

Ship

APPLICATIONS

SON 5-mm × 6-mm

Plastic Package

13-Inch

Reel

Tape and

Reel

2500

•

Point-of-Load Synchronous Buck in

Networking, Telecom and Computing Systems

•

Optimized for Control FET Applications

Text Added For Spacing

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

T_A= 25°C unless otherwise stated

VALUE

UNIT

V_DS

V_GS

Drain to Source Voltage

20 / –12

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications.

Gate to Source Voltage

Continuous Drain Current, T_C= 25°C

Continuous Drain Current⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

I_D

Top View

I_DM

P_D

T_J,

Operating Junction and Storage

–55 to 150

145

°C

T_STGTemperature Range

Avalanche Energy, single pulse

I_D= 30A, L = 0.1mH, R_G= 25Ω

E_AS

44°C/W on 1-inch²(6.45-cm²), 2-oz.

(1) Typical R_qJA

(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4

PCB.

P0093-01

(2) Pulse duration ≤300ms, duty cycle ≤2%

Text 4 Spacing

R_DS(on)vs V_GS

Text 4 Spacing

GATE CHARGE

I_D= 11A

V_DS= 15V

T_C= 125°C

T_C= 25°C

V_GS- Gate-to-Source Voltage - V

Q_g- Gate Charge - nC

G006

G003

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...9

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