Datasheet > CSD17381F4_16

CSD17381F4_16

更新时间： 2024-11-14 02:58:43

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
11页	1100K
描述
30 V N-Channel FemtoFET MOSFET

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CSD17381F4_16 数据手册

CSD17381F4

www.ti.com

SLPS411A –APRIL 2013–REVISED JULY 2013

30-V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD17381F4

PRODUCT SUMMARY

FEATURES

V_DS

Q_g

Drain to Source Voltage

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

•

Ultra Low On Resistance

Ultra Low Q_gand Q_gd

1040

133

Q_gd

Low Threshold Voltage

V_GS= 1.8V

160

110

R_DS(on)Drain to Source On Resistance

V_GS= 2.5V

V_GS= 4.5V

mΩ

Ultra Small Footprint (0402 Case Size)

–

1.0 mm x 0.6 mm

Ultra Low Profile

0.35 mm Height

Integrated ESD Protection Diode

V_GS(th)

Threshold Voltage

0.85

•

–

Text Added For Spacing

ORDERING INFORMATION

Device

CSD17381F4

Qty

Media

Package

Ship

–

Rated > 4kV HBM

Rated > 2kV CDM

7-Inch

Reel

3,000

Femto(0402) 1.0mm x

0.6mm SMD Lead Less

Tape and

Reel

•

Pb and Halogen Free

RoHS Compliant

13-Inch

Reel

CSD17381F4R 18,000

Text Added For Spacing

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

•

Optimized for Load Switch Applications

T_A= 25°C unless otherwise stated

VALUE

UNIT

Optimized for General Purpose Switching

Applications

V_DS

V_GS

I_D

Drain to Source Voltage

Gate to Source Voltage

Continuous Drain Current, T_A= 25°C⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

3.1

•

Single Cell Battery Applications

Handheld and Mobile Applications

I_DM

P_D

500

Human Body Model (HBM)

Charged Device Model (CDM)

DESCRIPTION

ESD

Rating

The FemtoFET™ MOSFET technology has been

designed and optimized to minimize the footprint in

many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing at least a 60%

reduction in footprint size.

T_J,

T_STG

Operating Junction and Storage

Temperature Range

–55 to 150

2.7

°C

Avalanche Energy, single pulse I_D= 7.4A,

L = 0.1mH, R_G= 25Ω

E_AS

(1) Typical R_θJA= 90°C/W on 1-inch²(6.45-cm²), 2-oz. (0.071-

mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.

(2) Pulse duration ≤300μs, duty cycle ≤2%

On Resistance vs. Gate Voltage

160

Top View

T_C= 25°C Id = 0.5A

T_C= 125ºC Id = 0.5A

150

140

130

120

110

100

V_GS- Gate-to- Source Voltage (V)

G001

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

FemtoFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...11

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与CSD17381F4_16相关器件

型号	品牌	获取价格	描述	数据表
CSD17381F4T	TI	获取价格	30V, N ch NexFET MOSFET™, single LGA 1.0 x 0.6mm, 117mOhm 3-PICOSTAR -55 to 150
CSD17382F4	TI	获取价格	采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单路、67mΩ、30V
CSD17382F4T	TI	获取价格	采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单路、67mΩ、30V
CSD17483F4	TI	获取价格	CSD17483F4, 30 V N-Channel FemtoFET MOSFET
CSD17483F4_13	TI	获取价格	30 V, N-Channel FemtoFET MOSFET
CSD17483F4R	TI	获取价格	30-V, N-Channel NexFET Power MOSFET
CSD17483F4T	TI	获取价格	30 V, N-Channel FemtoFET MOSFET
CSD17484F4	TI	获取价格	采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单路、128mΩ、30
CSD17484F4T	TI	获取价格	采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单路、128mΩ、30
CSD17501Q5A	TI	获取价格	30V, N-Channel NexFET Power MOSFETs

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