CSD17322Q5A

更新时间： 2024-09-25 12:55:15

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
11页	617K
描述
30V, N-Channel NexFETâ¢ Power MOSFETs

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替代型号

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CSD17322Q5A 数据手册

CSD17322Q5A

www.ti.com

SLPS330 –JUNE 2011

30V, N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD17322Q5A

FEATURES

PRODUCT SUMMARY

Drain to Source Voltage

•

Optimized for 5V Gate Drive

Ultralow Q_gand Q_gd

Low Thermal Resistance

Avalanche Rated

Pb Free Terminal Plating

RoHS Compliant

Halogen Free

V_DS

Q_g

3.6

1.1

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

mΩ

Q_gd

V_GS= 4.5V

V_GS= 8V

R_DS(on)Drain to Source On Resistance

V_GS(th)Threshold Voltage

7.3

1.6

ORDERING INFORMATION

SON 5-mm × 6-mm Plastic Package

Device

CSD17322Q5A

Package

Media

Qty

Ship

APPLICATIONS

SON 5-mm × 6-mm

Plastic Package

13-Inch

Reel

Tape and

Reel

2500

•

Notebook Point of Load

Point-of-Load Synchronous Buck in

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C unless otherwise stated

Networking, Telecom and Computing Systems

VALUE

UNIT

V_DS

V_GS

Drain to Source Voltage

DESCRIPTION

Gate to Source Voltage

+10 / –10

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications,

and optimized for 5V gate drive applications.

Continuous Drain Current, T_C= 25°C

Continuous Drain Current⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

104

I_D

I_DM

P_D

T_J,

Figure 1. Top View

Operating Junction and Storage

T_STGTemperature Range

–55 to 150

°C

Avalanche Energy, single pulse

I_D= 33A, L = 0.1mH, R_G= 25Ω

E_AS

(1) Typical R_θJA

41°C/W on

1-inch²(6.45-cm²),

2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick

FR4 PCB.

(2) Pulse duration ≤300μs, duty cycle ≤2%

P0093-01

R_DS(on)vs V_GS

GATE CHARGE

I_D= 14A

V_DD= 15V

T_C= 25°C

T_C= 125ºC

Q_g- Gate Charge - nC

V_GS- Gate-to- Source Voltage - V

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...11

中文翻译

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CSD17322Q5A 替代型号

型号	品牌	替代类型	描述	数据表
CSD17308Q3	TI	功能相似	30V N-Channel NexFETâ¢ Power MOSFETs
CSD17313Q2	TI	功能相似	30V N-Channel NexFET™ Power MOSFET
CSD17307Q5A	TI	功能相似	30V, N-Channel NexFET™ Power MOSFETs

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CSD17483F4_13	TI	获取价格	30 V, N-Channel FemtoFET MOSFET
CSD17483F4R	TI	获取价格	30-V, N-Channel NexFET Power MOSFET
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