Datasheet > CSD17313Q2_1010

CSD17313Q2_1010

更新时间： 2024-11-13 09:33:51

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
9页	313K
描述
30V N-Channel NexFET? Power MOSFET

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CSD17313Q2_1010 数据手册

CSD17313Q2

www.ti.com

SLPS260B –MARCH 2010–REVISED OCTOBER 2010

30V N-Channel NexFET™ Power MOSFET

PRODUCT SUMMARY

Drain to Source Voltage

FEATURES

V_DS

Q_g

2.1

0.4

•

Optimized for 5V Gate Drive

Ultra Low Q_gand Q_gd

Low Thermal Resistance

Pb Free

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

mΩ

Q_gd

V_GS= 3V

R_DS(on)Drain to Source On Resistance

V_GS= 4.5V

V_GS= 8V

RoHS Compliant

V_GS(th)

Threshold Voltage

1.3

Halogen Free

SON 2-mm × 2-mm Plastic Package

ORDERING INFORMATION

Device

CSD17313Q2

Package

Media

Qty

Ship

APPLICATIONS

SON 2-mm × 2-mm

Plastic Package

13-Inch

Reel

Tape and

Reel

3000

•

DC-DC Converters

•

Battery and Load Management Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

T_A= 25°C unless otherwise stated

VALUE

UNIT

V_DS

V_GS

Drain to Source Voltage

The NexFET power MOSFET has been designed to

minimize losses in power conversion applications and

optimized for 5V gate drive applications. The 2-mm ×

2-mm SON offers excellent thermal performance for

the size of the package.

Gate to Source Voltage

+10 / –8

Continuous Drain Current, T_C= 25°C

Continuous Drain Current⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation

I_D

I_DM

P_D

2.3

Top View

T_J,

T_STG

Operating Junction and Storage

Temperature Range

–55 to 150

°C

Avalanche Energy, Single Pulse,

I_D= 19A, L = 0.1mH, R_G= 25Ω

E_AS

(1) Package Limited

(2) Pulse duration ≤300ms, duty cycle ≤2%

P0108-01

Text For Spacing

R_DS(on)vs V_GS

Text For Spacing

GATE CHARGE

I_D= 4A

V_DS= 15V

T_C= 125°C

T_C= 25°C

0.5

1.5

2.5

3.5

V_GS- Gate-to-Source Voltage - V

Q_g- Gate Charge - nC

G006

G003

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...9

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与CSD17313Q2_1010相关器件

型号	品牌	获取价格	描述	数据表
CSD17313Q2Q1	TI	获取价格	30V N-Channel NexFET Power MOSFET
CSD17313Q2T	TI	获取价格	采用 2mm x 2mm SON 封装的单路、32mΩ、30V、N 沟道 NexFET™
CSD17318Q2	TI	获取价格	采用 2mm x 2mm SON 封装的单路、16.9mΩ、30V、N 沟道 NexFET
CSD17318Q2T	TI	获取价格	采用 2mm x 2mm SON 封装的单路、16.9mΩ、30V、N 沟道 NexFET
CSD17322Q5A	TI	获取价格	30V, N-Channel NexFETâ¢ Power MOSFETs
CSD17327Q5A	TI	获取价格	30V, N-Channel NexFETâ¢ Power MOSFETs
CSD17381F4	TI	获取价格	30-V, N-Channel NexFETâ¢ Power MOSFETs
CSD17381F4_16	TI	获取价格	30 V N-Channel FemtoFET MOSFET
CSD17381F4T	TI	获取价格	30V, N ch NexFET MOSFET™, single LGA 1.0 x 0.6mm, 117mOhm 3-PICOSTAR -55 to 150
CSD17382F4	TI	获取价格	采用 1mm x 0.6mm LGA 封装、具有栅极 ESD 保护的单路、67mΩ、30V

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