Datasheet > CMPA0527005F

CMPA0527005F

更新时间： 2022-02-26 14:48:07

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
12页	1011K
描述
5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT

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CMPA0527005F 数据手册

CMPA0527005F

5 W, 0.5 - 2.7 GHz, 50 V, GaN HEMT

CMPA0527005F is packaged gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC). This device is matched to 50 ohms at the input and

unmatched at the output. This device operates from a 50 V rail and

is intended to be used as a predriver from 500 MHz to 2700 MHz.

The transistor is available in a 6 leaded ﬂange package.

Typical Performance Over 500 MHz - 2.7 GHz (T_C= 25˚C), 50 V, P_IN= 24dBm, CW

Parameter

500 MHz

1.0 GHz

1.5 GHz

2.0 GHz

2.7 GHz

Units

Small Signal Gain

20.4

20.8

20.5

19.5

Output Power

Drain Eﬃciency

Note:

7.8

9.3

9.1

8.7

6.6

58.5

53.8

49.2

47.1

41.5

Measured in the CMPA0527005F-AMP1 application circuit.

Features

• Up to 2.7 GHz Operation

• 39 dBm Typical Output Power

• 20 dB Small Signal Gain

• Application Circuit for 0.5 - 2.7 GHz

• 50 % Eﬃciency

• 50 V Operation

Subject to change without notice.

www.cree.com/rf

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