Datasheet > CMPA1C1D060D

CMPA1C1D060D

更新时间： 2024-11-02 15:19:39

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
8页	381K
描述
60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier

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CMPA1C1D060D 数据手册

CMPA1C1D060D

60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC,

Power Ampliﬁer

Description

The CMPA1C1D060D is a gallium nitride (GaN) High Electron

Mobility Transistor (HEMT) based monolithic microwave integrated

circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate

length fabrication process. GaN-on-SiC has superior properties

compared to silicon, gallium arsenide or GaN-on-Si, including

higher breakdown voltage, higher saturated electron driꢀ velocity

and higher thermal conductivity. GaN HEMTs also oﬀer greater

power density and wider bandwidths compared to Si, GaAs, and

GaN-on-Si transistors.

PN: CMPA1C1D060D

Typical Performance Over 12.7-13.25 GHz (T_C= 25ºC)

Parameter

12.7 GHz

13.0 GHz

13.25 GHz

Units

Small Signal Gain

26.5

26.2

P_SAT@ P_IN= 28 dBm

PAE @ P_IN= 28 dBm

Note: All data in this table is based on fixtured, CW performance

Features

Applications

•

26 dB Small Signal Gain

60 W Typical P_SAT

Operation up to 40 V

High Breakdown Voltage

High Temperature Operation

Size 0.209 x 0.240 x 0.004 inches

•

Satellite Communications Uplink

PTP Radio

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 1.0, 2022-8-30

For further information and support please visit:

https://www.macom.com/support

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与CMPA1C1D060D相关器件

型号	品牌	获取价格	描述	数据表
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CMPA1D1E025	MACOM	获取价格	25 W; 13.75 to 14.5 GHz; 40 V; Ku-Band GaN MMIC Power Amplifier
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CMPA1D1E030	MACOM	获取价格	30 W; 13.75 to 14.5 GHz; 40 V; GaN MMIC Power Amplifier
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