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CMPA1C1D060D

更新时间: 2024-09-27 15:19:39
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
8页 381K
描述
60 W; 12.7 to 13.25 GHz; 40 V; GaN MMIC Power Amplifier

CMPA1C1D060D 数据手册

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CMPA1C1D060D  
60 W, 12.7 - 13.25 GHz, 40 V, GaN MMIC,  
Power Amplifier  
Description  
The CMPA1C1D060D is a gallium nitride (GaN) High Electron  
Mobility Transistor (HEMT) based monolithic microwave integrated  
circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate  
length fabrication process. GaN-on-SiC has superior properties  
compared to silicon, gallium arsenide or GaN-on-Si, including  
higher breakdown voltage, higher saturated electron driꢀ velocity  
and higher thermal conductivity. GaN HEMTs also offer greater  
power density and wider bandwidths compared to Si, GaAs, and  
GaN-on-Si transistors.  
PN: CMPA1C1D060D  
Typical Performance Over 12.7-13.25 GHz (TC = 25ºC)  
Parameter  
12.7 GHz  
13.0 GHz  
13.25 GHz  
Units  
dB  
Small Signal Gain  
26.5  
65  
26.2  
63  
26  
60  
27  
PSAT @ PIN = 28 dBm  
W
PAE @ PIN = 28 dBm  
29  
28  
%
Note: All data in this table is based on fixtured, CW performance  
Features  
Applications  
26 dB Small Signal Gain  
60 W Typical PSAT  
Operation up to 40 V  
High Breakdown Voltage  
High Temperature Operation  
Size 0.209 x 0.240 x 0.004 inches  
Satellite Communications Uplink  
PTP Radio  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
Rev. 1.0, 2022-8-30  
For further information and support please visit:  
https://www.macom.com/support  

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