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CMPA0530002 PDF预览

CMPA0530002

更新时间: 2024-09-30 17:01:23
品牌 Logo 应用领域
MACOM /
页数 文件大小 规格书
20页 1509K
描述
2 W; 0.5 - 3.0 GHz; Input Matched to 50 ohms, GaN MMIC for Pre-driver/Driver Amplifier Applications

CMPA0530002 数据手册

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CMPA0530002S  
2 W, 0.5 - 3.0 GHz, 28 V, GaN MMIC  
Description  
The CMPA0530002S is a packaged gallium nitride (GaN) High Electron  
Mobility Transistor (HEMT) based monolithic microwave integrated  
circuit (MMIC). The MMIC power amplifier is matched to 50-ohms on the  
input. The CMPA0530002S operates on a 28 volt rail while housed in a  
3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package. Under  
reduced power; the transistor can operate below 28V to as low as 20V  
Package Type: 3x4 DFN  
PN: CMPA0530002S  
V
DD; maintaining high gain and efficiency.  
Typical Performance Over 0.5 - 3.0 GHz (TC = 25ºC), 28 V  
Parameter  
0.5 GHz  
18.10  
2.85  
1.0 GHz  
17.90  
2.80  
1.5 GHz  
18.30  
2.99  
2.0 GHz  
17.90  
2.99  
2.5 GHz  
17.90  
2.84  
3.0 GHz  
Units  
dB  
Small Signal Gain  
Output Power1  
17.52  
2.90  
W
Power Gain1  
Power Added Efficiency1  
13.05  
56.0  
12.97  
48.7  
13.26  
56.2  
13.25  
51.2  
13.04  
46.0  
13.12  
49.1  
dB  
%
1Note: PIN = 21.5 dBm, CW  
Features for 28 V in CMPA0530002S-AMP  
Applications  
18 dB Small Signal Gain  
2.9 W Typical PSAT  
Operation up to 28 V  
High Breakdown Voltage  
High Temperature Operation  
Size 0.118 x 0.157 x 0.033 inches  
Civil and Military Communications  
Broadband Amplifiers  
Electronic Warfare  
Industrial, Scientific & Medical  
Radar  
Large Signal Models Available for ADS and MWO  
1
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.  
Visit www.macom.com for additional data sheets and product information.  
Rev. 1.3, 2022-12-8  
For further information and support please visit:  
https://www.macom.com/support  

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