Datasheet > CMPA13SF2

CMPA13SF2

更新时间： 2024-06-26 08:51:38

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1081K
描述
DFN2x2

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CMPA13SF2 数据手册

CMPA13SF2

P-Channel 12V (D-S) Power MOSFET

Description

Applications

CMPA13SF2 is the P-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features

Marking Code = PA13SF2

Date Code = XXXX



VDS: -12V

PA13SF2

XXXX

ID: -17A

RDS_ON(@VGS=-4.5V) : < 15mΩ

RDS_ON(@VGS=-2.5V) : < 24mΩ

RDS_ON(@VGS=-1.8V) : < 41mΩ

PIN 1



High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

DFN2020-6

Part Number

Packaging

Reel Size

CMPA13SF2 3000/Tape & Reel

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

Maximum

-12

Unit

Drain-source Voltage

Gate-source Voltage

VDS

VGS

±10

-17

TC=25°C

TC=70°C

TA=25°C

TA=70°C

-13

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

-10

-7

IDM

-67

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Case ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

9.6

RθJC

RθJA

TJ,TSTG

°C/W

°C

-55 to +150

Revision_1.0

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