Datasheet > BUZ906P

BUZ906P

更新时间： 2024-11-22 22:16:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
3页	42K
描述
P-CHANNEL POWER MOSFET

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中文翻译

获取价格

数据手册

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BUZ906P 数据手册

BUZ905P

BUZ906P

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

POWER MOSFET

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

15.49 (0.610)

16.26 (0.640)

POWER MOSFETS FOR

AUDIO APPLICATIONS

3.55 (0.140)

3.81 (0.150)

FEATURES

• HIGH SPEED SWITCHING

1.65 (0.065)

2.13 (0.084)

0.40 (0.016)

0.79 (0.031)

• P–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

2.87 (0.113)

3.12 (0.123)

1.01 (0.040)

1.40 (0.055)

2.21 (0.087)

2.59 (0.102)

5.25 (0.215)

BSC

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

TO–247

• N–CHANNEL ALSO AVAILABLE AS

BUZ900P & BUZ901P

Pin 1 – Gate

Pin 2 – Source

Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ905P

BUZ906P

case

Drain – Source Voltage

-160V

-200V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

-8A

GSS

-8A

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

125W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

1.0°C/W

θJC

Prelim. 10/94

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

12 3

中文翻译

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