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BUZ93 PDF预览

BUZ93

更新时间: 2024-09-25 22:16:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 181K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ93 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.28
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):220 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):3.6 A
最大漏极电流 (ID):3.6 A最大漏源导通电阻:2.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):14.5 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

BUZ93 数据手册

 浏览型号BUZ93的Datasheet PDF文件第2页浏览型号BUZ93的Datasheet PDF文件第3页浏览型号BUZ93的Datasheet PDF文件第4页浏览型号BUZ93的Datasheet PDF文件第5页浏览型号BUZ93的Datasheet PDF文件第6页浏览型号BUZ93的Datasheet PDF文件第7页 
BUZ 93  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
)
DS(on  
Package  
Ordering Code  
D
BUZ 93  
600 V  
3.6 A  
2.5 Ω  
TO-220 AB  
C67078-S1343-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 25 °C  
C
3.6  
Pulsed drain current  
Dpuls  
AR  
T = 25 °C  
C
14.5  
3.3  
6
Avalanche current,limited by T  
jmax  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
mJ  
jmax  
AR  
AS  
E
I = 3.3 A, V = 50 V, R = 25 Ω  
D
DD  
GS  
L = 37 mH, T = 25 °C  
220  
j
±
Gate source voltage  
Power dissipation  
V
P
20  
V
GS  
W
tot  
T = 25 °C  
C
80  
Operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Thermal resistance, chip case  
R
1.56  
K/W  
thJC  
thJA  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
75  
E
55 / 150 / 56  
Semiconductor Group  
1
07/96  

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