Datasheet > BUZ907D

BUZ907D

更新时间： 2024-11-23 06:44:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	29K
描述
P-CHANNEL POWER MOSFET

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中文翻译

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数据手册

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BUZ907D 数据手册

BUZ907D

BUZ908D

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm

P–CHANNEL

POWER MOSFET

+0.1

-0.15

25.0

8.7 Max.

10.90 ± 0.1

1.50

Typ.

11.60

± 0.3

POWER MOSFETS FOR

AUDIO APPLICATIONS

FEATURES

• HIGH SPEED SWITCHING

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (220V & 250V)

• HIGH ENERGY RATING

R 4.0 ± 0.1

R 4.4 ± 0.2

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODES

• COMPLIMENTARY N–CHANNEL

BUZ902D & BUZ903D

TO–3

Pin 1 – Gate

Pin 2 – Drain

Case – Source

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ907D

BUZ908D

case

Drain – Source Voltage

-220V

-250V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

-16A

GSS

-16A

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

250W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

0.5°C/W

θJC

Prelim. 01/97

Magnatec. Telephone (01455) 554711. Fax (01455) 552612.

中文翻译

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