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BUZ907P PDF预览

BUZ907P

更新时间: 2024-11-22 22:16:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
2页 28K
描述
POWER MOSFETS FOR AUDIO APPLICATIONS

BUZ907P 数据手册

 浏览型号BUZ907P的Datasheet PDF文件第2页 
BUZ907P  
BUZ908P  
MAGNA  
TEC  
MECHANICAL DATA  
Dimensions in mm  
P–CHANNEL  
POWER MOSFET  
4.69 (0.185)  
5.31 (0.209)  
1.49 (0.059)  
2.49 (0.098)  
15.49 (0.610)  
16.26 (0.640)  
POWER MOSFETS FOR  
AUDIO APPLICATIONS  
3.55 (0.140)  
3.81 (0.150)  
FEATURES  
1
2
3
• HIGH SPEED SWITCHING  
1.65 (0.065)  
2.13 (0.084)  
0.40 (0.016)  
0.79 (0.031)  
• SEMEFAB DESIGNED AND DIFFUSED  
• HIGH VOLTAGE (220V & 250V)  
• HIGH ENERGY RATING  
2.87 (0.113)  
3.12 (0.123)  
1.01 (0.040)  
1.40 (0.055)  
• ENHANCEMENT MODE  
2.21 (0.087)  
2.59 (0.102)  
• INTEGRAL PROTECTION DIODES  
5.25 (0.215)  
BSC  
• COMPLIMENTARY N–CHANNEL  
BUZ902P & BUZ903P  
TO-247  
Pin 2 – Source  
Case– Source  
Pin 1 – Gate  
Pin 3 – Drain  
ABSOLUTE MAXIMUM RATINGS  
(T  
= 25°C unless otherwise stated)  
BUZ907P  
BUZ908P  
case  
V
V
Drain – Source Voltage  
-220V  
-250V  
DSX  
Gate – Source Voltage  
Continuous Drain Current  
Body Drain Diode  
±14V  
-8A  
GSS  
I
I
D
-8A  
D(PK)  
P
Total Power Dissipation  
Storage Temperature Range  
@ T  
= 25°C  
125W  
D
stg  
j
case  
T
T
–55 to 150°C  
150°C  
Maximum Operating Junction Temperature  
Thermal Resistance Junction – Case  
R
1°C/W  
θJC  
Prelim. 01/97  
Magnatec. Telephone (01455) 554711. Fax (01455) 558843  

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