Datasheet > BUZ908P

BUZ908P

更新时间： 2024-09-24 21:55:31

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	28K
描述
POWER MOSFETS FOR AUDIO APPLICATIONS

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中文翻译

获取价格

数据手册

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BUZ908P 数据手册

BUZ907P

BUZ908P

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm

P–CHANNEL

POWER MOSFET

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

15.49 (0.610)

16.26 (0.640)

POWER MOSFETS FOR

AUDIO APPLICATIONS

3.55 (0.140)

3.81 (0.150)

FEATURES

• HIGH SPEED SWITCHING

1.65 (0.065)

2.13 (0.084)

0.40 (0.016)

0.79 (0.031)

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (220V & 250V)

• HIGH ENERGY RATING

2.87 (0.113)

3.12 (0.123)

1.01 (0.040)

1.40 (0.055)

• ENHANCEMENT MODE

2.21 (0.087)

2.59 (0.102)

• INTEGRAL PROTECTION DIODES

5.25 (0.215)

BSC

• COMPLIMENTARY N–CHANNEL

BUZ902P & BUZ903P

TO-247

Pin 2 – Source

Case– Source

Pin 1 – Gate

Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ907P

BUZ908P

case

Drain – Source Voltage

-220V

-250V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

-8A

GSS

-8A

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

125W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

1°C/W

θJC

Prelim. 01/97

Magnatec. Telephone (01455) 554711. Fax (01455) 558843

中文翻译

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