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BUZ90A PDF预览

BUZ90A

更新时间: 2024-11-22 22:16:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
9页 179K
描述
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

BUZ90A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.25
其他特性:AVALANCHE RATED雪崩能效等级(Eas):320 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):3.5 A最大漏极电流 (ID):4 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):16 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

BUZ90A 数据手册

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BUZ 90 A  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
)
DS(on  
Package  
Ordering Code  
D
BUZ 90 A  
600 V  
4 A  
2 Ω  
TO-220 AB  
C67078-S1321-A3  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 30 °C  
C
4
Pulsed drain current  
Dpuls  
AR  
T = 25 °C  
C
16  
4.5  
8
Avalanche current,limited by T  
jmax  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
mJ  
jmax  
AR  
AS  
E
I = 4.5 A, V = 50 V, R = 25 Ω  
D
DD  
GS  
L = 29 mH, T = 25 °C  
320  
j
±
Gate source voltage  
Power dissipation  
V
P
20  
V
GS  
W
tot  
T = 25 °C  
C
75  
Operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
Thermal resistance, chip case  
R
1.67  
K/W  
thJC  
thJA  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
75  
E
55 / 150 / 56  
Semiconductor Group  
1
07/96  

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