Datasheet > BUZ90AC67078-S1321-A3

BUZ90AC67078-S1321-A3

更新时间： 2024-11-25 23:38:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	179K
描述
TRANSISTOR TO 220 MOSFET N KANAL

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BUZ90AC67078-S1321-A3 数据手册

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BUZ 90 A

SIPMOS Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

Type

)

DS(on

Package

Ordering Code

BUZ 90 A

600 V

4 A

2 Ω

TO-220 AB

C67078-S1321-A3

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T = 30 °C

Pulsed drain current

Dpuls

T = 25 °C

4.5

Avalanche current,limited by T

jmax

Avalanche energy,periodic limited by T

Avalanche energy, single pulse

jmax

I = 4.5 A, V = 50 V, R = 25 Ω

L = 29 mH, T = 25 °C

320

Gate source voltage

Power dissipation

tot

T = 25 °C

Operating temperature

Storage temperature

-55 ... + 150 °C

-55 ... + 150

stg

Thermal resistance, chip case

≤ 1.67

K/W

thJC

thJA

Thermal resistance, chip to ambient

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Semiconductor Group

07/96

12 3 4 5 6 7...9

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