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BUZ91A-E3045 PDF预览

BUZ91A-E3045

更新时间: 2024-11-27 03:17:55
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
8页 188K
描述
Power Field-Effect Transistor, 8A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

BUZ91A-E3045 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:unknown风险等级:5.27
雪崩能效等级(Eas):570 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):8 A
最大漏源导通电阻:0.9 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):32 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUZ91A-E3045 数据手册

 浏览型号BUZ91A-E3045的Datasheet PDF文件第2页浏览型号BUZ91A-E3045的Datasheet PDF文件第3页浏览型号BUZ91A-E3045的Datasheet PDF文件第4页浏览型号BUZ91A-E3045的Datasheet PDF文件第5页浏览型号BUZ91A-E3045的Datasheet PDF文件第6页浏览型号BUZ91A-E3045的Datasheet PDF文件第7页 

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Power Field-Effect Transistor, 8A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal
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BUZ93-E3044 INFINEON

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Power Field-Effect Transistor, 3.6A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met