生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | SMALL OUTLINE, R-PSSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.27 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 570 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 8.5 A | 最大漏源导通电阻: | 0.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 34 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUZ91-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.5A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Met | |
BUZ91-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8.5A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Met | |
BUZ92 | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
BUZ92-E3044 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
BUZ92-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
BUZ92-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal | |
BUZ93 | INFINEON |
获取价格 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) | |
BUZ93-E3044 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met | |
BUZ93-E3045 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met | |
BUZ93-E3046 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met |