Datasheet > BUZ908D

BUZ908D

更新时间： 2024-11-26 06:44:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
2页	29K
描述
P-CHANNEL POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BUZ908D 数据手册

BUZ907D

BUZ908D

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm

P–CHANNEL

POWER MOSFET

+0.1

-0.15

25.0

8.7 Max.

10.90 ± 0.1

1.50

Typ.

11.60

± 0.3

POWER MOSFETS FOR

AUDIO APPLICATIONS

FEATURES

• HIGH SPEED SWITCHING

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (220V & 250V)

• HIGH ENERGY RATING

R 4.0 ± 0.1

R 4.4 ± 0.2

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODES

• COMPLIMENTARY N–CHANNEL

BUZ902D & BUZ903D

TO–3

Pin 1 – Gate

Pin 2 – Drain

Case – Source

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ907D

BUZ908D

case

Drain – Source Voltage

-220V

-250V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

-16A

GSS

-16A

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

250W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

0.5°C/W

θJC

Prelim. 01/97

Magnatec. Telephone (01455) 554711. Fax (01455) 552612.

中文翻译

下载PDF

与BUZ908D相关器件

型号	品牌	获取价格	描述	数据表
BUZ908P	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ90A	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90AC67078-S1321-A3	INFINEON	获取价格	TRANSISTOR TO 220 MOSFET N KANAL
BUZ90A-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o
BUZ90A-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o
BUZ90A-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o
BUZ90-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ90-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ90-E3046	INFINEON	获取价格	Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Met
BUZ91	INFINEON	获取价格	SIPMOS Power Transistor(N Channel)