Datasheet > BUZ906X4S

BUZ906X4S

更新时间： 2024-11-25 22:12:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	37K
描述
NEW PRODUCT UNDER DEVELOPMENT

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BUZ906X4S 数据手册

BUZ905X4S

BUZ906X4S

MAGNA

TEC

NEW PRODUCT UNDER DEVELOPMENT

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

POWER MOSFET

1 1.8 (0 .4 6 3 )

1 2.2 (0 .4 8 0 )

31 .5 (1 .2 4 0)

31 .7 (1 .2 4 8)

POWER MOSFETS FOR

AUDIO APPLICATIONS

8 .9 (0 .35 0 )

9 .6 (0 .37 8 )

7 .8 (0 .3 07 )

8 .2 (0 .3 22 )

4 .1 (0 .16 1)

4 .3 (0 .16 9)

Hex Nut M 4

(4 places)

4 .8 (0 .18 7)

4 .9 (0 .19 3)

(4 places)

H =

4.0 (0 .1 57 )

4.2 (0 .1 65 )

0 .7 5 (0.03 0)

0 .8 5 (0.03 3)

FEATURES

• HIGH SPEED SWITCHING

3.3 (0.129)

3.6 (0.143)

5.1 (0.2 01 )

5.9 (0.2 32 )

4.0 (0.157)

(2 Places)

• P–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

14.9 (0.587)

15.1 (0.594)

1 .9 5 (0 .07 7 )

2.1 4 (0 .0 84 )

3 0 .1 (1 .1 8 5 )

3 0 .3 (1 .1 9 3 )

38.0 (1.496)

38.2 (1.504)

• ENHANCEMENT MODE

SOT227

• INTEGRAL PROTECTION DIODE

• N–CHANNEL ALSO AVAILABLE

Pin 1 – Drain

Pin 2 – Source

Pin 3 – Gate

Pin 4 – Drain

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ905X4S BUZ906X4S

case

Drain – Source Voltage

–160V

–200V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

–32A

500W

D(PK)

Total Power Dissipation

@ T

= 25°C

stg

case

Storage Temperature Range

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

0.3°C/W

θJC

Prelim. 4/94

Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.

中文翻译

下载PDF

与BUZ906X4S相关器件

型号	品牌	获取价格	描述	数据表
BUZ907	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ907D	ETC	获取价格	P-CHANNEL POWER MOSFET
BUZ907P	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ908	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ908D	ETC	获取价格	P-CHANNEL POWER MOSFET
BUZ908P	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ90A	INFINEON	获取价格	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
BUZ90AC67078-S1321-A3	INFINEON	获取价格	TRANSISTOR TO 220 MOSFET N KANAL
BUZ90A-E3044	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o
BUZ90A-E3045	INFINEON	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o