Datasheet > BUZ902P

BUZ902P

更新时间： 2024-11-22 22:16:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	28K
描述
N CHANNEL POWER MOSFET

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中文翻译

获取价格

数据手册

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BUZ902P 数据手册

BUZ902P

BUZ903P

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm

N–CHANNEL

POWER MOSFET

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

15.49 (0.610)

16.26 (0.640)

POWER MOSFETS FOR

AUDIO APPLICATIONS

3.55 (0.140)

3.81 (0.150)

FEATURES

• HIGH SPEED SWITCHING

1.65 (0.065)

2.13 (0.084)

0.40 (0.016)

0.79 (0.031)

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (220V & 250V)

• HIGH ENERGY RATING

2.87 (0.113)

3.12 (0.123)

1.01 (0.040)

1.40 (0.055)

• ENHANCEMENT MODE

2.21 (0.087)

2.59 (0.102)

• INTEGRAL PROTECTION DIODES

5.25 (0.215)

BSC

• COMPLIMENTARY P–CHANNEL

BUZ907P & BUZ908P

TO-247

Pin 1 – Gate

Pin 2 – Source

Case – Source

Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ902P

BUZ903P

case

Drain – Source Voltage

220V

250V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

GSS

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

125W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

1°C/W

θJC

Prelim. 01/97

Magnatec. Telephone (01455) 554711. Fax (01455) 558843

中文翻译

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BUZ906D	ETC	获取价格	TRANSISTOR AUDIO NF LEISTUNGS MOSFET
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BUZ906P	ETC	获取价格	P-CHANNEL POWER MOSFET