Datasheet > BUZ905D

BUZ905D

更新时间： 2024-09-24 23:38:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	42K
描述
TRANSISTOR AUDIO NF LEISTUNGS MOSFET

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中文翻译

获取价格

数据手册

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BUZ905D 数据手册

BUZ905DP

BUZ906DP

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm

P–CHANNEL

POWER MOSFET

20.0

5.0

3.3 Dia.

POWER MOSFETS FOR

AUDIO APPLICATIONS

FEATURES

• HIGH SPEED SWITCHING

• P–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

2.0

3.4

1.0

2.0

0.6

2.8

1.2

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

5.45 5.45

• N–CHANNEL ALSO AVAILABLE AS

BUZ900DP & BUZ901DP

TO–3PBL

Pin 1 – Gate

Pin 2 – Source

Case is Source

Pin 3 – Drain

• DOUBLE DIE PACKAGE FOR MAXIMUM

POWER AND HEATSINK SPACE

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ905DP

BUZ906DP

case

Drain – Source Voltage

-160V

-200V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

GSS

-16A

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

250W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

0.5°C/W

θJC

Prelim. 2/95

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

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与BUZ905D相关器件

型号	品牌	获取价格	描述	数据表
BUZ905DP	ETC	获取价格	P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS
BUZ905P	ETC	获取价格	P-CHANNEL POWER MOSFET
BUZ905X4S	ETC	获取价格	NEW PRODUCT UNDER DEVELOPMENT
BUZ906	ETC	获取价格	TRANSISTOR AUDIO NF LEISTUNGS MOSFET
BUZ906D	ETC	获取价格	TRANSISTOR AUDIO NF LEISTUNGS MOSFET
BUZ906DP	ETC	获取价格	P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS
BUZ906P	ETC	获取价格	P-CHANNEL POWER MOSFET
BUZ906X4S	ETC	获取价格	NEW PRODUCT UNDER DEVELOPMENT
BUZ907	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ907D	ETC	获取价格	P-CHANNEL POWER MOSFET