Datasheet > BUZ906DP

BUZ906DP

更新时间： 2024-09-24 21:55:27

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
4页	42K
描述
P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS

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中文翻译

获取价格

数据手册

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BUZ906DP 数据手册

BUZ905DP

BUZ906DP

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm

P–CHANNEL

POWER MOSFET

20.0

5.0

3.3 Dia.

POWER MOSFETS FOR

AUDIO APPLICATIONS

FEATURES

• HIGH SPEED SWITCHING

• P–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

2.0

3.4

1.0

2.0

0.6

2.8

1.2

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

5.45 5.45

• N–CHANNEL ALSO AVAILABLE AS

BUZ900DP & BUZ901DP

TO–3PBL

Pin 1 – Gate

Pin 2 – Source

Case is Source

Pin 3 – Drain

• DOUBLE DIE PACKAGE FOR MAXIMUM

POWER AND HEATSINK SPACE

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ905DP

BUZ906DP

case

Drain – Source Voltage

-160V

-200V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

GSS

-16A

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

250W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

0.5°C/W

θJC

Prelim. 2/95

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

12 3 4

中文翻译

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