Datasheet > BUZ906

BUZ906

更新时间： 2024-11-25 23:38:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	41K
描述
TRANSISTOR AUDIO NF LEISTUNGS MOSFET

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中文翻译

获取价格

数据手册

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BUZ906 数据手册

BUZ905P

BUZ906P

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

POWER MOSFET

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

15.49 (0.610)

16.26 (0.640)

POWER MOSFETS FOR

AUDIO APPLICATIONS

3.55 (0.140)

3.81 (0.150)

FEATURES

• HIGH SPEED SWITCHING

1.65 (0.065)

2.13 (0.084)

0.40 (0.016)

0.79 (0.031)

• P–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

2.87 (0.113)

3.12 (0.123)

1.01 (0.040)

1.40 (0.055)

2.21 (0.087)

2.59 (0.102)

5.25 (0.215)

BSC

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

TO–247

• N–CHANNEL ALSO AVAILABLE AS

BUZ900P & BUZ901P

Pin 1 – Gate

Pin 2 – Source

Pin 3 – Drain

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ905P

BUZ906P

case

Drain – Source Voltage

-160V

-200V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

-8A

GSS

-8A

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

125W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

1.0°C/W

θJC

Prelim. 10/94

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

12 3 4

中文翻译

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与BUZ906相关器件

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BUZ906D	ETC	获取价格	TRANSISTOR AUDIO NF LEISTUNGS MOSFET
BUZ906DP	ETC	获取价格	P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS
BUZ906P	ETC	获取价格	P-CHANNEL POWER MOSFET
BUZ906X4S	ETC	获取价格	NEW PRODUCT UNDER DEVELOPMENT
BUZ907	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ907D	ETC	获取价格	P-CHANNEL POWER MOSFET
BUZ907P	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ908	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS
BUZ908D	ETC	获取价格	P-CHANNEL POWER MOSFET
BUZ908P	ETC	获取价格	POWER MOSFETS FOR AUDIO APPLICATIONS