Datasheet > BUZ900X4S

BUZ900X4S

更新时间： 2024-11-22 22:06:11

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	37K
描述
NEW PRODUCT UNDER DEVELOPMENT

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中文翻译

获取价格

数据手册

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BUZ900X4S 数据手册

BUZ900X4S

BUZ901X4S

MAGNA

TEC

NEW PRODUCT UNDER DEVELOPMENT

MECHANICAL DATA

Dimensions in mm (inches)

N–CHANNEL

POWER MOSFET

1 1.8 (0 .4 6 3 )

1 2.2 (0 .4 8 0 )

31 .5 (1 .2 4 0)

31 .7 (1 .2 4 8)

POWER MOSFETS FOR

AUDIO APPLICATIONS

8 .9 (0 .35 0 )

9 .6 (0 .37 8 )

7 .8 (0 .3 07 )

8 .2 (0 .3 22 )

4 .1 (0 .16 1)

4 .3 (0 .16 9)

Hex Nut M 4

(4 places)

4 .8 (0 .18 7)

4 .9 (0 .19 3)

(4 places)

H =

4.0 (0 .1 57 )

4.2 (0 .1 65 )

0 .7 5 (0.03 0)

0 .8 5 (0.03 3)

FEATURES

• HIGH SPEED SWITCHING

3.3 (0.129)

3.6 (0.143)

5.1 (0.2 01 )

5.9 (0.2 32 )

4.0 (0.157)

(2 Places)

• N–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

14.9 (0.587)

15.1 (0.594)

1 .9 5 (0 .07 7 )

2.1 4 (0 .0 84 )

3 0 .1 (1 .1 8 5 )

3 0 .3 (1 .1 9 3 )

38.0 (1.496)

38.2 (1.504)

• ENHANCEMENT MODE

SOT227

• INTEGRAL PROTECTION DIODE

• P–CHANNEL ALSO AVAILABLE

Pin 1 – Drain

Pin 2 – Source

Pin 3 – Gate

Pin 4 – Drain

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ900X4S BUZ901X4S

case

Drain – Source Voltage

160V

200V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

32A

D(PK)

Total Power Dissipation

@ T

= 25°C

500W

stg

case

Storage Temperature Range

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

0.3°C/W

θJC

Prelim. 4/94

Magnatec. Telephone (0455) 554711. Telex: 341927. Fax (0455) 552612.

中文翻译

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