Datasheet > BUZ901CDP

BUZ901CDP

更新时间： 2024-09-24 23:38:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	43K
描述
TRANSISTOR AUDIO NF LEISTUNGS MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BUZ901CDP 数据手册

BUZ900DP

BUZ901DP

MAGNA

TEC

MECHANICAL DATA

Dimensions in mm

N–CHANNEL

POWER MOSFET

20.0

5.0

3.3 Dia.

POWER MOSFETS FOR

AUDIO APPLICATIONS

FEATURES

• HIGH SPEED SWITCHING

• N–CHANNEL POWER MOSFET

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

• HIGH ENERGY RATING

2.0

3.4

1.0

2.0

0.6

2.8

1.2

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

5.45 5.45

• P–CHANNEL ALSO AVAILABLE AS

BUZ905DP & BUZ906DP

TO–3PBL

Pin 1 – Gate

Pin 2 – Source

Case is Source

Pin 3 – Drain

• DOUBLE DIE PACKAGE FOR MAXIMUM

POWER AND HEATSINK SPACE

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise stated)

BUZ900DP

BUZ901DP

case

Drain – Source Voltage

160V

200V

DSX

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

±14V

GSS

16A

D(PK)

Total Power Dissipation

Storage Temperature Range

@ T

= 25°C

250W

stg

case

–55 to 150°C

150°C

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

0.5°C/W

θJC

Prelim. 2/95

Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.

12 3 4

中文翻译

下载PDF

与BUZ901CDP相关器件

型号	品牌	获取价格	描述	数据表
BUZ901D	ETC	获取价格	TRANSISTOR AUDIO NF LEISTUNGS MOSFET
BUZ901DP	ETC	获取价格	N-CHANNEL POWER MOSFET
BUZ901P	ETC	获取价格	TRANSISTOR AUDIO NF LEISTUNGS MOSFET
BUZ901X4S	ETC	获取价格	NEW PRODUCT UNDER DEVELOPMENT
BUZ902	ETC	获取价格	N CHANNEL POWER MOSFET
BUZ902P	ETC	获取价格	N CHANNEL POWER MOSFET
BUZ903P	ETC	获取价格	N CHANNEL POWER MOSFET
BUZ905	ETC	获取价格	NEW PRODUCT UNDER DEVELOPMENT
BUZ905D	ETC	获取价格	TRANSISTOR AUDIO NF LEISTUNGS MOSFET
BUZ905DP	ETC	获取价格	P-CHANNEL POWER MOSFET FOR AUDIO APPLICATIONS