RoHS
COMPLIANT
BSS123
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
100V
● ID
200mA
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
<5.0ohm
<5.5ohm
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● High density cell design for low RDS(ON)
● Fast Switching Speed
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Small servo motor control
● Power MOSFET gate drivers
● Switching application
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
100
Unit
V
Drain-source Voltage
Gate-source Voltage
Drain Current
VDS
VGS
±20
V
TA=25℃ @ Steady State
TA=70℃ @ Steady State
200
160
ID
mA
mA
mW
℃/ W
℃
Pulsed Drain Current A
Total Power Dissipation @ TA=25℃
IDM
800
350
PD
Thermal Resistance Junction-to-Ambient @ Steady State B
Junction and Storage Temperature Range
RθJA
357
TJ ,TSTG
-55~+150
Ordering Information (Example)
■
PACKING
PREFERED P/N
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
Marking
DELIVERY MODE
CODE
BSS123
F2
B123.
3000
30000
120000
7“ reel
1 / 6
S-E074
Rev.3.2,04-Jan-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com