5秒后页面跳转
BSO065N03MSG PDF预览

BSO065N03MSG

更新时间: 2024-02-29 05:01:45
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
9页 313K
描述
OptiMOS™3 M-Series Power-MOSFET

BSO065N03MSG 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.81Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.0065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSO065N03MSG 数据手册

 浏览型号BSO065N03MSG的Datasheet PDF文件第2页浏览型号BSO065N03MSG的Datasheet PDF文件第3页浏览型号BSO065N03MSG的Datasheet PDF文件第4页浏览型号BSO065N03MSG的Datasheet PDF文件第5页浏览型号BSO065N03MSG的Datasheet PDF文件第6页浏览型号BSO065N03MSG的Datasheet PDF文件第7页 
BSO065N03MS G  
OptiMOS3 M-Series Power-MOSFET  
Product Summary  
Features  
V DS  
30  
6.5  
8
V
• Optimized for 5V driver application (Notebook, VGA, POL)  
• Low FOMSW for High Frequency SMPS  
• 100% Avalanche tested  
R DS(on),max  
V
V
GS=10 V  
GS=4.5 V  
m  
I D  
16  
A
• N-channel  
• Very low on-resistance R DS(on) @ V GS=4.5 V  
• Excellent gate charge x R DS(on) product (FOM)  
PG-DSO-8  
• Qualified for consumer level application  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSO065N03MS G  
PG-DSO-8  
065N03MS  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
10 secs steady state  
Parameter  
Symbol Conditions  
Unit  
Continuous drain current1)  
I D  
V
V
V
V
GS=10 V, T A=25 °C  
16  
13  
8.6  
11  
A
GS=10 V, T A=90 °C  
GS=4.5 V, T A=25 °C  
GS=4.5 V, T A=90 °C  
10.9  
14.2  
9.8  
7.8  
Pulsed drain current2)  
I D,pulse  
I AS  
T A=25 °C  
112  
16  
Avalanche current, single pulse3)  
Avalanche energy, single pulse  
Gate source voltage  
T A=25 °C  
E AS  
60  
I D=16 A, R GS=25 Ω  
mJ  
V
V GS  
±20  
Power dissipation1)  
P tot  
T A=25 °C  
2.5  
1.56  
W
°C  
T j, T stg  
-55 ... 150  
55/150/56  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
Rev.1.1  
page 1  
2009-11-19  

与BSO065N03MSG相关器件

型号 品牌 获取价格 描述 数据表
BSO065N03MSGXUMA1 INFINEON

获取价格

Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
BSO072N03S INFINEON

获取价格

OptiMOS2 Power-Transistor
BSO072N03S_09 INFINEON

获取价格

OptiMOS?2 Power-Transistor
BSO072N03SFUMA1 INFINEON

获取价格

Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
BSO072N03SXT INFINEON

获取价格

Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-
BSO080P03NS3EG INFINEON

获取价格

OptiMOSTM3 P3-Power-Transistor
BSO080P03NS3G INFINEON

获取价格

OptiMOSTM3 P3-Power-Transistor
BSO080P03S INFINEON

获取价格

OptiMOS-P Small-Signal-Transistor
BSO080P03S H INFINEON

获取价格

英飞凌高度创新型 OptiMOS? 系列包括 P 通道功率 MOSFET。这些产品始终满足
BSO080P03SH INFINEON

获取价格

OptiMOTM-P Power-Transistor