Datasheet > BSO110N03MS G

BSO110N03MS G

更新时间： 2023-09-03 20:37:19

品牌	Logo	应用领域
英飞凌 - INFINEON		通信电池栅数据通信服务器电脑栅极调节器
页数	文件大小	规格书
9页	553K
描述
极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6）

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BSO110N03MS G 数据手册

BSO110N03MS G

OptiMOS^™3 M-Series Power-MOSFET

Product Summary

Features

V _DS

• Optimized for 5V driver application (Notebook, VGA, POL)

• Low FOM_SWfor High Frequency SMPS

• 100% Avalanche tested

R _DS(on),max

V _GS=10 V

V _GS=4.5 V

mΩ

13.9

12.1

I _D

• N-channel

• Very low on-resistance R _DS(on)@ V _GS=4.5 V

• Excellent gate charge x R _DS(on)product (FOM)

PG-DSO-8

• Qualified for consumer level application

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSO110N03MS G

PG-DSO-8

110N03MS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

10 secs steady state

Parameter

Symbol Conditions

Unit

Continuous drain current¹⁾

I _D

V _GS=10 V, T _A=25 °C

V _GS=10 V, T _A=90 °C

12.1

8.4

6.6

V _GS=4.5 V, T _A=25 °C

V _GS=4.5 V, T _A=90 °C

10.8

7.5

8.5

5.9

Pulsed drain current²⁾

I _D,pulse

I _AS

T _A=25 °C

Avalanche current, single pulse³⁾

12.1

E _AS

I _D=12.1 A, R _GS=25 Ω

Avalanche energy, single pulse

V _GS

±20

Gate source voltage

Power dissipation¹⁾

P _tot

T _A=25 °C

2.5

1.56

°C

T _j, T _stg

-55 ... 150

55/150/56

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Rev.1.1

page 1

2009-11-19

12 3 4 5 6 7...9

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