5秒后页面跳转
BSO110N03MSG PDF预览

BSO110N03MSG

更新时间: 2024-01-10 12:06:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 314K
描述
OptiMOS™3 M-Series Power-MOSFET

BSO110N03MSG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.28
其他特性:AVALANCHE RATED雪崩能效等级(Eas):20 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:13.9 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:3元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
功耗环境最大值:1.56 W最大功率耗散 (Abs):1.56 W
最大脉冲漏极电流 (IDM):85 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON

BSO110N03MSG 数据手册

 浏览型号BSO110N03MSG的Datasheet PDF文件第2页浏览型号BSO110N03MSG的Datasheet PDF文件第3页浏览型号BSO110N03MSG的Datasheet PDF文件第4页浏览型号BSO110N03MSG的Datasheet PDF文件第5页浏览型号BSO110N03MSG的Datasheet PDF文件第6页浏览型号BSO110N03MSG的Datasheet PDF文件第7页 
BSO110N03MS G  
OptiMOS3 M-Series Power-MOSFET  
Product Summary  
Features  
V DS  
30  
11  
V
• Optimized for 5V driver application (Notebook, VGA, POL)  
• Low FOMSW for High Frequency SMPS  
• 100% Avalanche tested  
R DS(on),max  
V
V
GS=10 V  
GS=4.5 V  
m  
13.9  
12.1  
I D  
A
• N-channel  
• Very low on-resistance R DS(on) @ V GS=4.5 V  
• Excellent gate charge x R DS(on) product (FOM)  
PG-DSO-8  
• Qualified for consumer level application  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSO110N03MS G  
PG-DSO-8  
110N03MS  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
10 secs steady state  
Parameter  
Symbol Conditions  
Unit  
Continuous drain current1)  
I D  
V
V
GS=10 V, T A=25 °C  
12.1  
8.4  
10  
A
GS=10 V, T A=90 °C  
GS=4.5 V, T A=25 °C  
6.6  
V
V
10.8  
7.5  
8.5  
5.9  
GS=4.5 V, T A=90 °C  
Pulsed drain current2)  
I D,pulse  
I AS  
T A=25 °C  
T A=25 °C  
85  
Avalanche current, single pulse3)  
12.1  
E AS  
20  
I D=12.1 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
V GS  
±20  
Gate source voltage  
V
Power dissipation1)  
P tot  
T A=25 °C  
2.5  
1.56  
W
°C  
T j, T stg  
-55 ... 150  
55/150/56  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
Rev.1.1  
page 1  
2009-11-19  

与BSO110N03MSG相关器件

型号 品牌 获取价格 描述 数据表
BSO110N03MSGXUMA1 INFINEON

获取价格

Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
BSO119N03S INFINEON

获取价格

OptiMOS2 Power-Transistor
BSO130N03MSG INFINEON

获取价格

OptiMOS™3 M-Series Power-MOSFET
BSO130N03MSGXUMA1 INFINEON

获取价格

Small Signal Field-Effect Transistor, 7.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
BSO130P03S INFINEON

获取价格

OptiMOS-P Small-Signal-Transistor
BSO130P03SH INFINEON

获取价格

OptiMOS-P Small-Signal-Transistor
BSO130P03SHXUMA1 INFINEON

获取价格

Small Signal Field-Effect Transistor, 9.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
BSO150N03 INFINEON

获取价格

OptiMOS2 Power-Transistor
BSO150N03_10 INFINEON

获取价格

OptiMOS™2 Power-Transistor
BSO150N03MD G INFINEON

获取价格

极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS? 25V 成