Datasheet > BSO080P03S H

BSO080P03S H

更新时间： 2024-01-08 19:01:40

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	308K
描述
英飞凌高度创新型 OptiMOS? 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。

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BSO080P03S H 数据手册

BSO080P03S H

OptiMOS™-P Power-Transistor

Product Summary

Features

V _DS

-30

• P-Channel

R _DS(on),max

I _D

• Enhancement mode

-14.9

• Logic level

• 150°C operating temperature

PG-DSO-8

• Qualified according JEDEC for target applications

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

lead free

Yes

Halogen free

packing

dry

BSO080P03S H

P-DSO-8

080P3S

Yes

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

ꢀ10 secs steady state

Parameter

Symbol Conditions

Unit

T _A=25 °C¹⁾

I _D

Continuous drain current

-14.9

-11.9

-12.6

-10

T _A=70 °C¹⁾

T _A=25 °C²⁾

I _D,pulse

-60

248

±25

Pulsed drain current

E _AS

I _D=-14.9 A, R _GS=25 :

Avalanche energy, single pulse

V _GS

Gate source voltage

T _A=25 °C¹⁾

P _tot

Power dissipation

2.5

1.79

°C

T _j, T _stg

-55 ... 150

Operating and storage temperature

ESD class

JESD22-A114 HBM

260

Soldering temperature

IEC climatic category; DIN IEC 68-1

55/150/56

Rev. 1.31

page 1

2010-02-10

12 3 4 5 6 7...9

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