生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.82 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 9.8 A |
最大漏源导通电阻: | 0.0083 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSO094N03S | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor | |
BSO094N03S_09 | INFINEON |
获取价格 |
OptiMOS™2 Power-Transistor | |
BSO094N03SFUMA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
BSO104N03S | INFINEON |
获取价格 |
OptiMOS2 Power-Transistor | |
BSO104N03S_08 | INFINEON |
获取价格 |
OptiMOS®2 Power-Transistor | |
BSO108N03MSCG | INFINEON |
获取价格 |
OptiMOS™3 M-Series Power-MOSFET | |
BSO108N03MSCGXUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 30V, 0.0108ohm, 1-Element, N-Channel, Silicon, Me | |
BSO110N03MS G | INFINEON |
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极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS™ 25V 成 | |
BSO110N03MSG | INFINEON |
获取价格 |
OptiMOS™3 M-Series Power-MOSFET | |
BSO110N03MSGXUMA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |