Datasheet > BSO104N03S_08

BSO104N03S_08

更新时间： 2024-02-16 23:04:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	319K
描述
OptiMOS®2 Power-Transistor

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中文翻译

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数据手册

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BSO104N03S_08 数据手册

BSO104N03S

OptiMOS^®2 Power-Transistor

Product Summary

Features

V _DS

9.7

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

• N-channel

R _DS(on),max

I _D

mΩ

• Logic level

PG-DSO-8

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• Avalanche rated

• Pb-free plating; RoHS compliant

Type

Package

Marking

BSO104N03S

PG-DSO-8

104N3S

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

10 secs steady state

Parameter

Symbol Conditions

Unit

T _A=25 °C²⁾

I _D

Continuous drain current

T _A=70 °C²⁾

T _A=25 °C³⁾

I _D,pulse

Pulsed drain current

E _AS

I _D=13 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=13 A, V _DS=20 V,

di /dt =200 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=150 °C

V _GS

±20

Gate source voltage

T _A=25 °C²⁾

P _tot

Power dissipation

2.5

1.56

°C

T _j, T _stg

-55 ... 150

55/150/56

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Rev. 1.6

page 1

2008-01-16

12 3 4 5 6 7...9

中文翻译

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