是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
雪崩能效等级(Eas): | 20 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 10 A |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.0108 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
湿度敏感等级: | 3 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 最大脉冲漏极电流 (IDM): | 85 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSO108N03MSCGXUMA1 | INFINEON |
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Power Field-Effect Transistor, 10A I(D), 30V, 0.0108ohm, 1-Element, N-Channel, Silicon, Me | |
BSO110N03MS G | INFINEON |
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极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS™ 25V 成 | |
BSO110N03MSG | INFINEON |
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OptiMOS™3 M-Series Power-MOSFET | |
BSO110N03MSGXUMA1 | INFINEON |
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Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
BSO119N03S | INFINEON |
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OptiMOS2 Power-Transistor | |
BSO130N03MSG | INFINEON |
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OptiMOS™3 M-Series Power-MOSFET | |
BSO130N03MSGXUMA1 | INFINEON |
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Small Signal Field-Effect Transistor, 7.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
BSO130P03S | INFINEON |
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OptiMOS-P Small-Signal-Transistor | |
BSO130P03SH | INFINEON |
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OptiMOS-P Small-Signal-Transistor | |
BSO130P03SHXUMA1 | INFINEON |
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Small Signal Field-Effect Transistor, 9.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |