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BSO108N03MSCGXUMA1 PDF预览

BSO108N03MSCGXUMA1

更新时间: 2024-02-08 19:16:45
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲光电二极管晶体管
页数 文件大小 规格书
9页 329K
描述
Power Field-Effect Transistor, 10A I(D), 30V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8

BSO108N03MSCGXUMA1 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.84雪崩能效等级(Eas):20 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.0108 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):85 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSO108N03MSCGXUMA1 数据手册

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BSO108N03MSC G  
OptiMOS3 M-Series Power-MOSFET  
Product Summary  
Features  
C-Series  
V DS  
30  
V
• Optimized for 5V driver application (Notebook, VGA, POL)  
• Low FOMSW for High Frequency SMPS  
• 100% Avalanche tested  
R DS(on),max  
V
V
GS=10 V  
GS=4.5 V  
10.8  
13.6  
12.2  
m  
I D  
A
• N-channel  
• Very low on-resistance R DS(on) @ V GS=4.5 V  
• Excellent gate charge x R DS(on) product (FOM)  
PG-DSO-8  
• Qualified for consumer level application  
• Pb-free plating; RoHS compliant  
• Halogen-free according to IEC61249-2-21  
Type  
Package  
Marking  
BSO108N03MSC G  
PG-DSO-8  
108N03MSC  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
10 secs steady state  
Parameter  
Symbol Conditions  
Unit  
Continuous drain current1)  
I D  
V
V
GS=10 V, T A=25 °C  
12.2  
8.5  
10  
A
GS=10 V, T A=90 °C  
GS=4.5 V, T A=25 °C  
6.7  
V
V
10.9  
7.6  
8.6  
6
GS=4.5 V, T A=90 °C  
Pulsed drain current2)  
I D,pulse  
I AS  
T A=25 °C  
85  
12.2  
20  
Avalanche current, single pulse3)  
Avalanche energy, single pulse  
Gate source voltage  
T A=25 °C  
E AS  
I D=12.2 A, R GS=25 Ω  
mJ  
V
V GS  
±20  
Power dissipation1)  
P tot  
T A=25 °C  
2.5  
1.56  
W
°C  
T j, T stg  
-55 ... 150  
55/150/56  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
Rev.1.1  
page 1  
2009-11-19  

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