生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.82 | 其他特性: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 10 A | 最大漏源导通电阻: | 0.0091 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 120 pF |
JEDEC-95代码: | MS-012AA | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSO104N03S | INFINEON |
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OptiMOS2 Power-Transistor | |
BSO104N03S_08 | INFINEON |
获取价格 |
OptiMOS®2 Power-Transistor | |
BSO108N03MSCG | INFINEON |
获取价格 |
OptiMOS™3 M-Series Power-MOSFET | |
BSO108N03MSCGXUMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 30V, 0.0108ohm, 1-Element, N-Channel, Silicon, Me | |
BSO110N03MS G | INFINEON |
获取价格 |
极低的栅极和输出电荷,结合极低的导通状态电阻和小体积封装,使 OptiMOS™ 25V 成 | |
BSO110N03MSG | INFINEON |
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OptiMOS™3 M-Series Power-MOSFET | |
BSO110N03MSGXUMA1 | INFINEON |
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Small Signal Field-Effect Transistor, 8.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal | |
BSO119N03S | INFINEON |
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OptiMOS2 Power-Transistor | |
BSO130N03MSG | INFINEON |
获取价格 |
OptiMOS™3 M-Series Power-MOSFET | |
BSO130N03MSGXUMA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 7.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal |