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APTGT75TDU60PG-Module PDF预览

APTGT75TDU60PG-Module

更新时间： 2024-11-06 14:55:35
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
5页 256K
描述
Configuration: Triple Dual common sourceVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75Silicon type: TRENCH 3 IGBT Package: SP6P

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APTGT75TDU60PG-Module 数据手册

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APTGT75TDU60PG  
Triple Dual Common Source  
Trench + Field Stop IGBT®  
Power Module  
VCES = 600V  
IC = 75A @ Tc = 80°C  
C1  
C3  
C5  
Application  
•
•
•
AC Switches  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
G1  
G3  
G5  
E1  
E2  
E3  
E4  
E5  
E6  
Features  
E1/E2  
E3/E4  
E5/E6  
•
Trench + Field Stop IGBT® Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
G6  
G2  
G4  
C2  
C4  
C6  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
•
•
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
•
High level of integration  
Benefits  
•
•
•
•
•
•
•
•
Stable temperature behavior  
C 1  
C 3  
C 5  
Very rugged  
G1  
G3  
E3  
G5  
E5  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Very low (12mm) profile  
E1  
E1/E2  
E3/E4  
E5/E6  
E2  
E4  
G4  
E6  
G6  
G2  
C 2  
C 4  
C 6  
Each leg can be easily paralleled to achieve a dual  
common source configuration of three times the  
current capability  
•
RoHS Compliant  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
V
VCES  
Collector - Emitter Breakdown Voltage  
600  
TC = 25°C  
100  
IC  
Continuous Collector Current  
A
TC = 80°C  
TC = 25°C  
75  
140  
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
±20  
V
W
TC = 25°C  
TJ = 150°C  
Maximum Power Dissipation  
250  
RBSOA Reverse Bias Safe Operating Area  
150A @ 550V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  
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