Datasheet > APTGT75X60T3G-Module

APTGT75X60T3G-Module

更新时间： 2024-11-06 14:53:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	317K
描述
Configuration: Three Phase bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75Silicon type: TRENCH 3 IGBT Package: SP3F

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTGT75X60T3G-Module 数据手册

浏览型号APTGT75X60T3G-Module的Datasheet PDF文件第2页

浏览型号APTGT75X60T3G-Module的Datasheet PDF文件第3页

浏览型号APTGT75X60T3G-Module的Datasheet PDF文件第4页

APTGT75X60T3G

3 Phase bridge

Trench + Field Stop IGBT3

Power Module

V_CES= 600V

I_C= 75A* @ Tc = 80°C

Application



Motor control

Features



Trench + Field Stop IGBT3 Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Low leakage current

RBSOA and SCSOA rated

It is recommended to connect a decoupling capacitor



Kelvin emitter for easy drive

Very low stray inductance

Internal thermistor for temperature monitoring

between pins 31 & 2 to reduce switching overvoltages, if DC

Power is connected between pins 15, 16 & 12.

Pins 15 & 16 must be shorted together.

Benefits



Outstanding performance at high frequency

operation



Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal

for easy PCB mounting



Low profile

RoHS compliant

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (Per IGBT)

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Voltage

Continuous Collector Current

600

100*

75*

150

±20

250

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

T_C= 25°C

T_J= 150°C

RBSOA Reverse Bias Safe Operating Area

150A @ 550V

* Specification of IGBT device but output current must be limited due to size of output pin.

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

中文翻译

下载PDF

与APTGT75X60T3G-Module相关器件

型号	品牌	获取价格	描述	数据表
APTGTQ100A65T1G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100DA65T1G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100DDA65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100H65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100SK65T1G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ150TA65TPG-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200A65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200DA65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200SK65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ50TA65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea

与APTGT75X60T3G-Module相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

APTGT75X60T3G-Module

APTGT75X60T3G-Module 数据手册

与APTGT75X60T3G-Module相关器件

与APTGT75X60T3G-Module相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

APTGT75X60T3G-Module

APTGT75X60T3G-Module 数据手册

与APTGT75X60T3G-Module相关器件

与APTGT75X60T3G-Module相关文章

您还可以找

您在本页遇到什么问题？