5秒后页面跳转
捷配首页

Datasheet > APTGU120DU120T
APTGU120DU120T PDF预览

APTGU120DU120T

更新时间： 2024-11-24 21:13:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 栅
页数 文件大小 规格书
6页 289K
描述
Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES,

阅读下载

中文翻译

获取价格

APTGU120DU120T 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：compliant风险等级：5.29
最大集电极电流 (IC)：180 A集电极-发射极最大电压：1200 V
门极-发射极最大电压：20 V元件数量：1
最高工作温度：150 °C最大功率耗散 (Abs)：735 W
子类别：Insulated Gate BIP TransistorsVCEsat-Max：3.9 V
Base Number Matches：1

APTGU120DU120T 数据手册

 浏览型号APTGU120DU120T的Datasheet PDF文件第2页浏览型号APTGU120DU120T的Datasheet PDF文件第3页浏览型号APTGU120DU120T的Datasheet PDF文件第4页浏览型号APTGU120DU120T的Datasheet PDF文件第5页浏览型号APTGU120DU120T的Datasheet PDF文件第6页 
APTGU120DU120T  
VCES = 1200V  
IC = 120A @ Tc = 80°C  
Dual common source  
PT IGBT Power Module  
Application  
•
•
•
AC Switches  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Features  
C1  
C2  
•
Power MOS 7® Punch Through (PT) IGBT  
Q1  
Q2  
-
-
-
-
Low conduction loss  
Ultra fast tail current shutoff  
Low gate charge  
Switching frequency capability in the 50kHz  
range  
G1  
E1  
G2  
E2  
-
-
Soft recovery parallel diodes  
Low diode VF  
E
NTC1  
NTC2  
•
•
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
•
•
Internal thermistor for temperature monitoring  
High level of integration  
G2  
E2  
Benefits  
C2  
C2  
•
Outstanding performance at high frequency  
operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
C1  
E
•
•
•
E1  
E2  
G2  
NTC2  
NTC1  
G1  
•
Low profile  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
180  
120  
420  
±20  
735  
V
Tc = 25°C  
Tc = 80°C  
Tc = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
Tc = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 150°C 420A @ 960V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 6  
APT website – http://www.advancedpower.com  
123456

中文翻译

下载PDF

与APTGU120DU120T相关器件

型号 品牌 获取价格 描述 数据表
APTGU140DU60T MICROSEMI

获取价格

 		Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES
APTGU140DU60T ADPOW

获取价格

 		Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-12
APTGU140SK60T MICROSEMI

获取价格

 		Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES
APTGU180A120 MICROSEMI

获取价格

 		Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES
APTGU180DA120 MICROSEMI

获取价格

 		Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES
APTGU180DA120 ADPOW

获取价格

 		Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
APTGU180DU120 MICROSEMI

获取价格

 		Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES
APTGU180SK120 ADPOW

获取价格

 		Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
APTGU180U120D MICROSEMI

获取价格

 		Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES,
APTGU200A60 MICROSEMI

获取价格

 		Insulated Gate Bipolar Transistor, 290A I(C), 600V V(BR)CES

与APTGU120DU120T相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证