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APTGU60DA120T PDF预览

APTGU60DA120T

更新时间: 2024-11-24 21:15:11
品牌 Logo 应用领域
美高森美 - MICROSEMI
页数 文件大小 规格书
3页 192K
描述
Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES

APTGU60DA120T 技术参数

生命周期:Obsolete零件包装代码:MODULE
包装说明:,针数:12
Reach Compliance Code:compliant风险等级:5.84
最大集电极电流 (IC):90 A集电极-发射极最大电压:1200 V
门极-发射极最大电压:20 V元件数量:1
最高工作温度:150 °C最大功率耗散 (Abs):390 W
子类别:Insulated Gate BIP TransistorsVCEsat-Max:3.9 V
Base Number Matches:1

APTGU60DA120T 数据手册

 浏览型号APTGU60DA120T的Datasheet PDF文件第2页浏览型号APTGU60DA120T的Datasheet PDF文件第3页 
APTGU60DA120T  
VCES = 1200V  
IC = 60A @ Tc = 80°C  
Boost chopper  
PT IGBT Power Module  
Application  
AC and DC motor control  
Switched Mode Power Supplies  
Power Factor Correction  
Features  
Power MOS 7® Punch Through (PT) IGBT  
-
-
-
-
Low conduction loss  
Ultra fast tail current shutoff  
Low gate charge  
Switching frequency capability in the 50kHz  
range  
-
-
Soft recovery parallel diodes  
Low diode VF  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
G2  
OUT  
E2  
Outstanding performance at high frequency  
operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
OUT  
VBUS  
0/VBUS  
E2  
G2  
NTC2  
NTC1  
VBUS  
SENSE  
Low profile  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
V
Tc = 25°C  
Tc = 80°C  
Tc = 25°C  
90  
60  
210  
±20  
390  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
Tc = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 150°C 210A @ 960V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 3  
APT website – http://www.advancedpower.com  

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