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APTGV75H60T3G PDF预览

APTGV75H60T3G

更新时间: 2024-11-24 08:33:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 双极性晶体管
页数 文件大小 规格书
9页 373K
描述
Full - Bridge NPT & Trench + Field Stop? IGBT Power module

APTGV75H60T3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X25
针数:25Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):100 A
集电极-发射极最大电压:600 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X25
JESD-609代码:e1湿度敏感等级:1
元件数量:4端子数量:25
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称断开时间 (toff):310 ns
标称接通时间 (ton):170 nsVCEsat-Max:1.9 V
Base Number Matches:1

APTGV75H60T3G 数据手册

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APTGV75H60T3G  
Trench & Field Stop® IGBT Q1, Q3:  
V
CES = 600V ; IC = 75A @ Tc = 80°C  
Full - Bridge  
NPT & Trench + Field Stop® IGBT  
Power module  
Fast NPT IGBT Q2, Q4:  
VCES = 600V ; IC = 60A @ Tc = 80°C  
13 14  
Application  
Solar converter  
Features  
Q1  
Q3  
CR1  
22  
CR3  
11  
10  
18  
19  
7
8
Q2, Q4 FAST Non Punch Through (NPT) IGBT  
- Switching frequency up to 100 kHz  
- RBSOA & SCSOA rated  
23  
Q2  
29  
Q4  
32  
-
Low tail current  
CR2  
CR4  
26  
27  
4
3
Q1, Q3 Trench & Field Stop IGBT®  
- Low voltage drop  
- Switching frequency up to 20 kHz  
- RBSOA & SCSOA rated  
30  
31  
-
Low tail current  
15  
16  
R1  
Kelvin emitter for easy drive  
Very low stray inductance  
Top switches : Trench + Field Stop IGBT®  
Bottom switches : FAST NPT IGBT  
High level of integration  
Internal thermistor for temperature monitoring  
28 27 26 25  
23 22  
20 19 18  
29  
30  
16  
15  
Benefits  
Optimized conduction & switching losses  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal  
for easy PCB mounting  
31  
32  
14  
13  
2
3
4
7
8
10 11  
12  
Low profile  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
All multiple inputs and outputs must be shorted together  
13/14 ; 15/16 ; 26/27 ; 31/32  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 9  
www.microsemi.com  

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