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APTGU40TDU120P PDF预览

APTGU40TDU120P

更新时间： 2024-11-05 19:57:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 栅
页数 文件大小 规格书
6页 322K
描述
Insulated Gate Bipolar Transistor, 64A I(C), 1200V V(BR)CES,

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中文翻译

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APTGU40TDU120P 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.73
最大集电极电流 (IC)：64 A集电极-发射极最大电压：1200 V
门极-发射极最大电压：20 V元件数量：3
最高工作温度：150 °C最大功率耗散 (Abs)：277 W
子类别：Insulated Gate BIP TransistorsVCEsat-Max：3.9 V
Base Number Matches：1

APTGU40TDU120P 数据手册

 浏览型号APTGU40TDU120P的Datasheet PDF文件第2页浏览型号APTGU40TDU120P的Datasheet PDF文件第3页浏览型号APTGU40TDU120P的Datasheet PDF文件第4页浏览型号APTGU40TDU120P的Datasheet PDF文件第5页浏览型号APTGU40TDU120P的Datasheet PDF文件第6页 
APTGU40TDU120P  
Triple Dual Common Source  
PT IGBT Power Module  
VCES = 1200V  
IC = 40A @ Tc = 80°C  
C1  
C3  
C5  
Application  
•
•
•
AC Switches  
G1  
G3  
G5  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
E1  
E2  
E3  
E4  
E5  
E6  
E1/E2  
E3/E4  
E5/E6  
Features  
•
Power MOS 7® Punch Through (PT) IGBT  
-
-
-
-
Low conduction loss  
Ultra fast tail current shutoff  
Low gate charge  
G6  
G2  
G4  
Switching frequency capability in the 200kHz  
range  
C2  
C4  
C6  
-
-
Soft recovery parallel diodes  
Low diode VF  
•
•
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
•
High level of integration  
Benefits  
C 1  
C 3  
C 5  
•
Outstanding performance at high frequency  
operation  
G1  
G3  
E3  
G5  
E5  
•
•
•
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
E1  
E1/E2  
E3/E4  
E5/E6  
E2  
G2  
E4  
G4  
E6  
G6  
•
•
Very low (12mm) profile  
C 2  
C 4  
C 6  
Each leg can be easily paralleled to achieve a dual  
common source of three times the current  
capability  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
64  
40  
160  
±20  
277  
V
Tc = 25°C  
Tc = 80°C  
Tc = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
Tc = 25°C  
SSOA  
Switching Safe Operating Area  
Tj = 150°C 170A @ 960V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 6  
APT website – http://www.advancedpower.com  
123456

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