Datasheet > APTGU180DA120

APTGU180DA120

更新时间： 2024-11-05 21:20:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		栅
页数	文件大小	规格书
3页	186K
描述
Insulated Gate Bipolar Transistor, 250A I(C), 1200V V(BR)CES

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技术参数
数据手册

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APTGU180DA120 技术参数

生命周期：	Obsolete	零件包装代码：	MODULE
包装说明：	,	针数：	5
Reach Compliance Code：	compliant	风险等级：	5.84
最大集电极电流 (IC)：	250 A	集电极-发射极最大电压：	1200 V
门极-发射极最大电压：	20 V	元件数量：	1
最高工作温度：	150 °C	最大功率耗散 (Abs)：	1041 W
子类别：	Insulated Gate BIP Transistors	VCEsat-Max：	3.9 V
Base Number Matches：	1

APTGU180DA120 数据手册

APTGU180DA120

V_CES= 1200V

I_C= 180A @ Tc = 80°C

Boost chopper

PT IGBT Power Module

Application

•

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

Features

•

Power MOS 7^®Punch Through (PT) IGBT

Low conduction loss

Ultra fast tail current shutoff

Low gate charge

Switching frequency capability in the 50kHz

range

Soft recovery parallel diodes

Low diode VF

•

Kelvin emitter for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors

•

Benefits

•

High level of integration

VBUS

0/VBUS

OUT

Outstanding performance at high frequency

operation

•

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Low profile

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

T_c= 25°C

T_c= 80°C

T_c= 25°C

250

180

630

±20

1041

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_c= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 150°C 630A @ 960V

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

1 - 3

APT website – http://www.advancedpower.com

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