Datasheet > APTGTQ150TA65TPG-Module

APTGTQ150TA65TPG-Module

更新时间： 2024-11-21 14:55:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
14页	924K
描述
High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow leakage cur

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中文翻译

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APTGTQ150TA65TPG-Module 数据手册

APTGTQ150TA65TPG

Triple Phase Leg High-Speed IGBT 5 Power Module

Product Overview

The APTGTQ150TA65TPG device is a three phase leg 650V, 150A Insulated-Gate Bipolar Transistor (IGBT) 5 power

module.

VBUS1

VBUS2

VBUS3

NTC1

NTC2

0/VBUS1

0/VBUS2

0/VBUS3

Note:ꢀAll ratings at T_J= 25 °C, unless otherwise specified.

These devices are sensitive to electrostatic discharge. Proper handling procedures must be followed.

CAUTION

DS00004814A-page 1

Data Sheet

and its subsidiaries

12 3 4 5 6 7...14

中文翻译

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