Datasheet > APTGTQ100DA65T1G-Module

APTGTQ100DA65T1G-Module

更新时间： 2024-11-06 14:54:51

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	430K
描述
High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow leakage cur

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTGTQ100DA65T1G-Module 数据手册

浏览型号APTGTQ100DA65T1G-Module的Datasheet PDF文件第2页

浏览型号APTGTQ100DA65T1G-Module的Datasheet PDF文件第3页

浏览型号APTGTQ100DA65T1G-Module的Datasheet PDF文件第4页

APTGTQ100DA65T1G

V_CES= 650V

I_C= 100A @ Tc = 25°C

Boost chopper

High speed IGBT 5 Power Module

Application

•

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

CR1

Features

•

High speed IGBT 5

NTC

Low voltage drop

Low tail current

Switching frequency up to 100 kHz

Low leakage current

CR2

•

Very low stray inductance

Internal thermistor for temperature monitoring

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for easy

PCB mounting

•

Low profile

RoHS compliant

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

Unit

V_CES

650

100

200

±20

250

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

中文翻译

下载PDF

与APTGTQ100DA65T1G-Module相关器件

型号	品牌	获取价格	描述	数据表
APTGTQ100DDA65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100H65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100SK65T1G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ150TA65TPG-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200A65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200DA65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200SK65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ50TA65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGU10H120T3	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 18A I(C), 1200V V(BR)CES,
APTGU120DA120T	MICROSEMI	获取价格	Insulated Gate Bipolar Transistor, 180A I(C), 1200V V(BR)CES