Datasheet > APTGTQ100DDA65T3G-Module

APTGTQ100DDA65T3G-Module

更新时间： 2024-11-06 14:54:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	514K
描述
High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow leakage cur

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数据手册

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APTGTQ100DDA65T3G-Module 数据手册

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APTGTQ100DDA65T3G

Dual boost chopper

High speed IGBT 5 Power Module

V_CES= 650V

I_C= 100A @ Tc = 25°C

13 14

Application

•

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

CR1

CR2

Features

•

High speed IGBT 5

Low voltage drop

Low tail current

Switching frequency up to 100 kHz

Low leakage current

•

Very low stray inductance

Internal thermistor for temperature monitoring

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

Easy paralleling due to positive TC of VCEsat

Each leg can be easily paralleled to achieve a single

boost of twice the current capability.

RoHS compliant

•

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (Per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

Unit

V_CES

650

100

200

±20

250

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

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