Datasheet > APTGT75X60T3G

APTGT75X60T3G

更新时间： 2024-11-05 06:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		电源电路双极性晶体管
页数	文件大小	规格书
5页	273K
描述
3 Phase bridge Trench + Field Stop IGBT® Power Module

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中文翻译

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数据手册

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APTGT75X60T3G 数据手册

APTGT75X60T3G

3 Phase bridge

Trench + Field Stop IGBT^®

Power Module

V_CES= 600V

I_C= 75A* @ Tc = 80°C

Application

•

Motor control

Features

•

Trench + Field Stop IGBT^®Technology

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

It is recommended to connect a decoupling capacitor

•

Kelvin emitter for easy drive

Very low stray inductance

between pins 31 & 2 to reduce switching overvoltages, if DC

Power is connected between pins 15, 16 & 12.

Pins 15 & 16 must be shorted together.

High level of integration

Internal thermistor for temperature monitoring

Benefits

28 27 26 25

23 22

20 19 18

•

Outstanding performance at high frequency

operation

•

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal

for easy PCB mounting

•

Low profile

RoHS compliant

10 11

Absolute maximum ratings

Symbol

Parameter

Max ratings

600

Unit

V_CES

Collector - Emitter Breakdown Voltage

T_C= 25°C

100*

75*

I_C

Continuous Collector Current

T_C= 80°C

T_C= 25°C

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

150

±20

T_C= 25°C

T_J= 150°C

Maximum Power Dissipation

250

RBSOA Reverse Bias Safe Operating Area

150A @ 550V

* Specification of IGBT device but output current must be limited to 40A at Tc=80°C and 65A at Tc=25°C not to

exceed a connectors temperature greater than 120°C.

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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中文翻译

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与APTGT75X60T3G相关器件

型号	品牌	获取价格	描述	数据表
APTGT75X60T3G-Module	MICROCHIP	获取价格	Configuration: Three Phase bridgeVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 75Silicon
APTGTQ100A65T1G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100DA65T1G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100DDA65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100H65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ100SK65T1G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ150TA65TPG-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200A65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200DA65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea
APTGTQ200SK65T3G-Module	MICROCHIP	获取价格	High speed IGBT 5 Low voltage dropLow tail currentSwitching frequency up to 100 kHzLow lea

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